Analysis of DAR IMPATT Diode for Some Frequency Bands
نویسندگان
چکیده
The analysis of DAR IMPATT diodes has been realized on basis of the precise drift-diffusion nonlinear model. The admittance characteristics of the DAR diode were analyzed in very wide frequency band from 30 up to 360 GHz. The energy characteristics have been optimized for the second high frequency band near the 220 GHz.
منابع مشابه
Analysis and Optimization of a DAR IMPATT Diode for 330 GHz
The analysis and optimization of the npvnp avalanche diode have been realized on basis of the nonlinear model and special optimization procedure. This type of the diode that was named as Double Avalanche Region (DAR) IMPATT diode includes two avalanche regions inside the diode. The phase delay which was produced by means of the two avalanche regions and the drift region v is sufficient to obtai...
متن کاملA Detailed Computer Analysis of SiC And GaN Based IMPATT Diodes Operating at Ka, V And W Band
From 1965 onwards lot of developments and simulation works have been done in the field of IMPATT diode to improve its power output, efficiency and frequency range of operation using low band gap material like Si, GaAs, InP etc. In this paper a comprehensive study has been made on IMPATT diodes based on high band gap materials, GaN (Wz) and SiC (4H) operating at Ka, V and W-band respectively rel...
متن کاملAnalysis of a Double Avalanche Region IMPATT Diode for High Frequency Part of Millimetric Region
The analysis and optimization of the npvnp avalanche diode structure that includes two avalanche regions have been realized on basis of the nonlinear model and special optimization procedure. The admittance characteristics of the DAR diode were analyzed in very wide frequency band from 30 up to 360 GHz and had been optimized for the third frequency band near the 300 GHz.
متن کاملAnalysis and Optimization of a Double Avalanche Region IMPATT diode
The analysis and optimization of the npvnp avalanche diode structure that includes two avalanche regions have been realized on basis of the nonlinear model and special optimization procedure. The admittance and energy characteristics of the DAR diode were analyzed in very wide frequency band from 30 up to 360 GHz. Output power level was optimized for the second frequency band near the 220 GHz.
متن کاملA Theory of Multiple Modes in Avalanche Diodes
This report develops a multidimensional, dynamic analysis of solid state avalanche diodes. Well-established electromagnetic concepts are applied to a widely used model of the diode and reveal a discrete spectrum of new small-signal modes. The approach used enlarges the conventional perspective and has permitted the discovery that at least one of these new modes appears to possess a high power c...
متن کامل